代表性论文如下：

1. Zhang X. P., Deng R*, Li Y, et al. Self-powered wavelength-selective ultraviolet bipolar photodetector based on Al/p-GaN/In:Ga2O3/SnO2 structure for secure optical communication[J]. ACS Applied Materials & Interfaces, 2025, 18(1), 2019-2028. (第一通讯)

2. Yin Q. D., Deng R*, Li Y, et al. Dayong Jiang et al. Pyro-phototronic effect enhanced photoelectrochemical photodetector with a graded SnO2/BFO/NiOx heterojunction for high-speed and encrypted underwater optical communication. Chemical Engineering Journal, 2025, 525,170128. (第一通讯)

3. Ge J. L., Deng R*, Li Y, et al. Tailoring surface properties and optoelectronic response of Ga2O3 films through advanced surface state engineering[J]. Applied Surface Science, 2026, 719: 165035.(第一通讯)

4. Han C. L. , Deng R*, Li Y, et al. The role of Nd doping in defect compensation and performance enhancement of SnO2 ultraviolet photodetectors,Journal of Alloys and Compound, 2025, 1016, 178910. (第一通讯)

5. Sun B., Deng R*, Li Y, et al. Improved selectivity of (InxGa1-x)2O3/Ga2O3/GaN double heterojunction ultraviolet photodetectors, Ceramics International,2025, 51, 14028-14036.(第一通讯)

6. Li D. L., Deng R*, Li Y, et al. Wavelength Modulation and Fast Response of Mixed-Phase β‑Ga2O3:Zn/SnO2 in-Plane Heterojunction Ultraviolet Photodetectors, ACS Applied Materials & Interfaces, 2024, 16, 45156-45165. (第一通讯)

7. Shi H. Y., Deng R*, Li Y, et al. Enhancing photo-response performance through ultrathin Al2O3 modification at the p-SnO2:Al/n-GaN heterojunction interface, Optical Materials, 2024, 156, 115950. (第一通讯)

8. Sun B. T., Deng R*, Li Y, et al. Impurity-related defect complexes-mediated ferromagnetism and impurity band hopping conduction in a highly compensated Zn-doped SnO2, Materials Science in Semiconductor Processing, 2023, 162, 107518-107527.(第一通讯) 

9. Han X., Deng R*, et al.Tuning optical and electrical properties of Ti x Sn 1−x O 2 alloy thin films with dipole-forbidden transition via band gap and defect engineering, Journal of Alloys and Compounds, 2021, 885, 160974. (第一通讯)

10. Deng R*, et al. Cation impurity-defect complex induced ferromagnetism and hopping conduction in Sb-doped ZnO synthesized under high pressure ,Journal of Alloys and Compounds, 823 (2020) 153713. (第一作者)

11. Deng R*, et al.Ultraviolet electroluminescence from nanostructural SnO2-based heterojunction with high-pressure synthesized Li-doped ZnO as a hole source, Ceramics International, 2019, 45, 4392-4397. (第一作者)

12. Zhao J. L., Deng R*, et al.Photoresponse enhancement in SnO2-based ultraviolet photodetectors via coupling with surface plasmons of Ag particles, Journal of Alloys and Compounds 748 (2018) 398-403.(第一通讯)

13. Zhou H., Deng R*, et al.Giant enhancement of ultraviolet near-band-edge emission from a wide-bandgap oxide with dipole-forbidden bandgap transition, 2017, 705, 492-496. (第一通讯)

14. Zhou H., Deng R*, et al. Wavelength-Tuned Light Emission via Modifying the Band Edge Symmetry: Doped SnO2 as an Example, J. Phys. Chem. C 2014, 118, 6365-6371. (第一通讯)

15. Li X., Deng R*, et al. Effect of Mg doping on optical and electrical properties of SnO2 thin films: An experiment and first-principles study, 2016, 42, 5299-5303. (第一通讯)

16. Deng R*, et al.Recovering near-band-edge ultraviolet responses in a wide-bandgap oxide with dipole-forbidden bandgap transition, 2015, 649, 625-629. (第一作者)